Tuairisgeul toraidh
4h-n 4inch 6inch dia100mm wafer sìol sic 1mm tiugh airson fàs ingot
Meud gnàthaichte / 2inch / 3inch / 4inch / 6inch 6H-N / 4H-SEMI / 4H-N ingots SIC / Àrd-ghlan 4H-N 4inch 6inch dia 150mm silicon carbide criostal singilte (sic) substrates wafersS / Customzied as-cut sic sic wafersProduction ìre 4H-N 1.5mm SIC Wafers airson criostal sìl
Mu dheidhinn Silicon Carbide (SiC)Crystal
Tha silicon carbide (SiC), ris an canar cuideachd carborundum, na semiconductor anns a bheil silicon agus carbon le foirmle ceimigeach SiC. Tha SiC air a chleachdadh ann an innealan dealanach semiconductor a bhios ag obair aig teòthachd àrd no bholtachd àrd, no both.SiC cuideachd mar aon de na pàirtean LED cudromach, tha e na fho-strat mòr-chòrdte airson innealan GaN a tha a’ fàs, agus tha e cuideachd na spreader teas ann an àrd-. LEDs cumhachd.
Tuairisgeul
| Seilbh | 4H-SiC, Criostal Singilte | 6H-SiC, Criostal Singilte |
| Parameters Lattice | a = 3.076 Å c = 10.053 Å | a = 3.073 Å c = 15.117 Å |
| Seicheamh cruachadh | ABCB | ABCACB |
| Mohs cruas | ≈9.2 | ≈9.2 |
| Dùmhlachd | 3.21 g/cm3 | 3.21 g/cm3 |
| Teirm. Co-èifeachd leudachaidh | 4-5 × 10-6/K | 4-5 × 10-6/K |
| Clàr-innse ath-tharraing @750nm | chan eil = 2.61 | chan eil = 2.60 |
| Constant dielectric | c~9.66 | c~9.66 |
| Giùlan teirmeach (seòrsa N, 0.02 ohm.cm) | a ~ 4.2 W / cm · K@298K |
|
| Giùlan teirmeach (leth-insulation) | a ~ 4.9 W / cm · K@298K | a ~ 4.6 W / cm · K@298K |
| Còmhlan-beàrn | 3.23 eV | 3.02 eV |
| Raon dealain briseadh-sìos | 3-5 × 106V / cm | 3-5 × 106V / cm |
| Saturation Drift Velocity | 2.0 × 105m/s | 2.0 × 105m/s |
